会议详情 |
由陕西省科学技术协会支持,陕西省纳米科技学会主办,西安文理学院陕西省表面工程与再制造重点实验室承办,陕西天元智能再制造有限公司、西安交通大学金属材料强度国家重点实验室、《稀有金属材料与工程》编辑部、《中国表面工程》编辑部协办的“2015年中国纳米科技与再制造技术青年论坛”定于2015年11月6-8日在中国·西安举办。
2015年中国纳米科技与再制造技术青年论坛
大会拟邀装甲兵工程学徐滨士院士、西安交通大学卢秉恒院士、西安交通大学蒋庄德院士、空军工程大学李应红院士、香港城市大学吕坚院士、Paul K Chu教授、国际热处理与表面工程联合会财务总监匈牙利OBUDA大学Dr. Felde Imre等海内外著名专家、学者出席并做大会特邀主题报告。会议采用主题报告、大会报告、分会特邀报告、口头交流等方法,与参会代表进行深入、广泛的研讨和交流。
会议名称:2015年中国纳米科技与再制造技术青年论坛
会议时间:2015年11月6-8日
会议地点:中国·西安(具体地点另行通知)
11月6日报到,7日大会,8日分会。
1.李应红,1983年毕业于空军工程学院,1989年3月在南京理工大学获硕士学位。2002年被选为中国共产党第十六次全国代表大会代表。现任空军工程大学工程学院一系、空军“飞机推进技术”高新技术中心主任,教授、博士生导师,专业技术三级,专业技术少将军衔,空军级专家。享受政府特殊津贴。2013年当选中国科学院院士。
2.何偉友,明道大學材料科學與工程學系教授且兼教務長。歷任永源科技股份有限公司總經理,台灣鍍膜科技協會創始會員及秘書長。大同工學院機械所博士畢業後從事硬質薄膜的研究超過20年,研究各種硬質薄膜的商業應用,亦參與磁控濺鍍機和陰極電弧鍍膜機的研發,發表相關論文60篇。主要的研究工作集中在硬質薄膜CrN、TiAlN、CrAlN、CrSiN、MoS2、DLC、Cr(N,O)、CrAlSiN複合鍍層的特性研究與在刀工模具的應用等。其它如TiO2光觸媒、燃料電池雙極板材料之保護性薄膜之應用亦有初步研究。
3. Paul K Chu received his BS in mathematics (cum laude) from The Ohio State University in 1977 and his MS and PhD in chemistry from Cornell University in 1979 and 1982, respectively. He is a Fellow of the American Physical Society (APS), American Vacuum Society (AVS), IEEE, Materials Research Society (MRS), and Hong Kong Institution of Engineers. He is the recipient of the 2007 IEEE NPSS Merit Award which is the most prestigious award given by IEEE in the areas of nuclear and plasma sciences, 2008 MRS (Taiwan) JW Mayer Lectureship, and 2011 Shanghai Natural Science First Class Award.
He is chairman of the International Plasma-Based Ion Implantation Executive Committee which organizes the biennial International Workshop on Plasma-Based Ion Implantation and Deposition (PBII&D) and a member of the Ion Implantation Technology (IIT) International Committee that organizes the biennial International Conference on Ion Implantation Technology as well as the IEEE Nuclear and Plasma Science Society Fellow Evaluation Committee.
He holds or has held advisory or visiting professorship in thirteen universities and research institutes in China, including the Institute of Microelectronics in Peking University, Department of Physics in Nanjing University, and Shanghai Institute of Ceramics of the Chinese Academy of Sciences. He has established a joint PhD program with the University of Sydney in Australia.
Prof. Chu is associate editor of Materials Science and Engineering: Reports, and a member of the editorial board of Biomaterials, Advanced Materials Interfaces, Surface and Interface Analysis, Surface and Coatings Technology, Recent Patents on Materials Science, International Journal of Molecular Engineering, and Cancer Technology: Basic, Translational, and Clinical Research.
Prof. Chu has authored / co-authored more than 1,100 journal papers and given more than 100 plenary, keynote, and invited talks in international scientific conferences. He is also editor of 8 books on plasma science and engineering, biomaterials, and nanotechnology and co-authored more than 30 book chapters.
4.Edward Y. Chang received his B.S. degree from Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan in 1977, and his Ph.D. degree from Materials Science and Engineering, University of Minnesota Minneapolis, MN in 1985. Dr. Chang was with Unisys Corporation GaAs Component Group, Eagan, MN, 1985 to 1988 and Comsat Labs Microelectronic Group from 1988 to 1992. He worked on the GaAs MMIC programs on both groups. He joined National Chiao Tung University (NCTU), Hsinchu, Taiwan, in 1992. In 1994, he helped set up the first GaAs MMIC production line in Taiwan, and become president of Hexawave Inc., Hsinchu, Taiwan, in 1995. He returned to the teaching position at NCTU in 1999. Dr. Chang is currently the Dean of Research and Development and Dean of Internation semiconductor school, Chair professor of the Department of Materials Science and Engineering and Dept of Elecrical Engineering at NCTU. He is also the director of Diamond Lab and the director of NCTU-TSMC research center.
His research interests include new device and process technologies for Compound Semiconductors for wireless communication and high power electronic applications. Currently his research activities include InP, GaAs based compound materials and devices (HEMT, HBT) for wireless communication and sub-milimeterwave imaging applications. GaN based materials (MBE, MOCVD) and High frequency&High power electronic (HEMT) applications. III-V/ Si integration (Ge, SiGe, GaAs, InP) for logic applications. Advanced package (Flip chip) for high frequency and power applications.
会费:正式代表1200元,于2015年10月8日前注册1000元,学生代表1000元,于2015年10月8日前注册800元。
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